Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence
نویسندگان
چکیده
Articles you may be interested in Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence J. Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN Appl. Time-resolved cathodoluminescence and photocurrent study of the yellow band in Si-doped GaN Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence Appl.
منابع مشابه
Exciton hopping probed by picosecond time-resolved cathodoluminescence
Mehran Shahmohammadi, Gw! enol! e Jacopin, Xuewen Fu, Jean-Daniel Ganière, Dapeng Yu, and Benôıt Deveaud Laboratoire d’Opto! electronique Quantique, ! Ecole Polytechnique F! ed! erale de Lausanne (EPFL), Station 3, CH-1015 Lausanne, Switzerland State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Department of Physics, 209 Chengfu Road, Peking University, Beijing 100...
متن کاملCarrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence
Spatially, spectrally, and temporally resolved cathodoluminescence ~CL! techniques have been employed to examine the optical properties and kinetics of carrier relaxation for metalorganic chemical vapor deposition grown InGaN/GaN single quantum wells ~QWs!. Cathodoluminescence wavelength imaging of the QW sample revealed local band gap variations, indicating the presence of local In composition...
متن کاملImplementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density m-Plane In_{0.05}Ga_{0.95}N Epilayer Grown on a Freestanding GaN Substrate
Spatio-time-resolved cathodoluminescence (STRCL) spectroscopy is implemented to assess the local carrier dynamics in a 70-nm-thick, very low threading dislocation (TD) density, pseudomorphic m-plane In0:05Ga0:95N epilayer grown on a freestanding GaN substrate by metalorganic vapor phase epitaxy. Although TDs or stacking faults are absent, sub-micrometer-wide zonary patterns parallel to the c-ax...
متن کاملEXCITON LOCALIZATION IN InGaN/GaN QUANTUM WELLS
Time-resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation in a InGaN/GaN single quantum well (QW) sample. CL images of the QW sample revealed a spotty cellular pattern indicative of local In compositional variations, which induce local potential fluctuations and result in a strong lateral excitonic localization at I...
متن کاملTime-resolved cathodoluminescence study of carrier relaxation, transfer, collection, and filling in coupled InxGa1−xN/GaN multiple and single quantum wells
We have examined in detail the optical properties and carrier capture dynamics of coupled InxGa1−xN/GaN multiple and single quantum well MQW and SQW structures that possess various numbers of QWs in the confinement region adjacent to a SQW. The aim is to study the influence of the structure of an InGaN MQW confinement region on carrier transfer and collection into a coupled SQW. By applying in ...
متن کامل